Caracteristici
Brand :
Samsung
Capacitate (GB):
1000
Interfata:
PCIe3.0 x4
NVMe protocol:
1.3
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
3500
Rata de transfer la scriere (MB/s):
2700
Random Read IOPS:
500000
Random Write IOPS:
500000
Controller:
Samsung Phoenix
Tipul celulei memoriei:
3D NAND MLC
TBW (Terabytes Written), TB:
1200
MTBF, Mh:
1.5
DRAM cache, MB:
1024
Garantie, luni :
60
