Caracteristici
Brand :
Samsung
Capacitate (GB):
500
Interfata:
PCIe3.0 x4
NVMe protocol:
1.4
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
3100
Rata de transfer la scriere (MB/s):
2600
Random Read IOPS:
400000
Random Write IOPS:
470000
Controller:
Samsung Pablo
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
300
MTBF, Mh:
1.5
DRAM cache, MB:
512
Garantie, luni :
60
