Caracteristici
Brand :
Goodram
Capacitate (GB):
256
Interfata:
PCIe3.0 x4
NVMe protocol:
1.4
Rata de transfer la citire (MB/s):
3200
Rata de transfer la scriere (MB/s):
1300
Random Read IOPS:
80000
Random Write IOPS:
250000
Controller:
Silicon Motion (SM)
Tip Memorie:
3D NAND TLC
TBW (Terabytes Written), TB:
150
MTBF, Mh:
1.5
DRAM cache, MB:
0
Garantie, luni:
36
