Caracteristici
Brand :
Goodram
Capacitate (GB):
256
Interfata:
PCIe4.0 x4
Form factor:
m.2 2280
NVMe protocol:
1.4
Rata de transfer la citire (MB/s):
3400
Rata de transfer la scriere (MB/s):
2000
Random Read IOPS:
440000
Random Write IOPS:
550000
Controller:
Silicon Motion (SM)
Tip Memorie:
3D NAND TLC
TBW (Terabytes Written), TB:
100
MTBF, Mh:
2
DRAM cache, MB:
0
Garantie, luni:
36
