Caracteristici
Brand :
Goodram
Capacitate (GB):
2000
Interfata:
PCIe4.0 x4
NVMe protocol:
1.4
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
5000
Rata de transfer la scriere (MB/s):
4200
Random Read IOPS:
695000
Random Write IOPS:
700000
Controller:
Phison
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
600
MTBF, Mh:
2
DRAM cache, MB:
0
Garantie, luni :
36
