Caracteristici
Brand :
Goodram
Capacitate (GB):
1000
Interfata:
PCIe4.0 x4
NVMe protocol:
1.4
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
3600
Rata de transfer la scriere (MB/s):
2700
Random Read IOPS:
550000
Random Write IOPS:
600000
Controller:
Silicon Motion (SM)
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
300
MTBF, Mh:
1.5
DRAM cache, MB:
0
Garantie, luni :
36
