Caracteristici
Brand :
Goodram
Capacitate (GB):
512
Interfata:
PCIe3.0 x4
NVMe protocol:
1.4
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
2400
Rata de transfer la scriere (MB/s):
1300
Random Read IOPS:
110000
Random Write IOPS:
250000
Controller:
Silicon Motion (SM)
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
300
MTBF, Mh:
1.5
DRAM cache, MB:
0
Garantie, luni :
36
