Caracteristici
Brand :
Goodram
Capacitate (GB):
1000
Interfata:
PCIe5.0 x4
NVMe protocol:
2.0
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
10200
Rata de transfer la scriere (MB/s):
8400
Random Read IOPS:
1300000
Random Write IOPS:
1500000
Controller:
Phison
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
600
MTBF, Mh:
1.5
DRAM cache, MB:
0
Garantie, luni :
60
