Caracteristici
Brand :
Samsung
Capacitate (GB):
1000
Interfata:
PCIe4.0 x4
NVMe protocol:
2.0
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
7450
Rata de transfer la scriere (MB/s):
6900
Random Read IOPS:
1200000
Random Write IOPS:
1550000
Controller:
Samsung Pascal
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
600
MTBF, Mh:
1.5
DRAM cache, MB:
1024
Garantie, luni :
60
