Caracteristici
Brand :
Samsung
Capacitate (GB):
2000
Interfata:
PCIe 4.0 x4/ 5.0 x2
NVMe protocol:
2.0
Form factor:
m.2 2280
Rata de transfer la citire (MB/s):
7250
Rata de transfer la scriere (MB/s):
6300
Random Read IOPS:
1000000
Random Write IOPS:
1350000
Controller:
Samsung Piccolo
Tipul celulei memoriei:
3D NAND TLC
TBW (Terabytes Written), TB:
1200
MTBF, Mh:
1.5
DRAM cache, MB:
0
Garantie, luni :
60
